50: Unveiling Phonon Contributions to Thermal Conductivity and the Applicability of the Wiedemann—Franz Law in Ruthenium and Tungsten Thin Films

Advanced Functional Materials, e11592, 2025

Md. Rafiqul Islam, P. Karna, N. Bhatt, S. Thakur, H. Heinrich, D.M. Hirt, S. Zare, C. Jezewski, R.T.P. Lee, K. Tapily, J. T. Gaskins,  C. D. Landon, S. W. King, A. Giri, P.E. Hopkins

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49: (Invited) Scaling Challenges for Advanced CMOS Devices 
International Journal of High Speed Electronics and Systems 26, p.1740001, 2017
A.P. Jacob, R. Xie, M.G. Sung, L. Liebmann, Rinus T.P. Lee, B. Taylor

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48: Investigation of the Thermal Stability of Mo-In0. 45Ga0. 47As for Applications as Source/Drain Contacts
Journal of Applied Physics 120 (13), p.135303, 2016
Lee A. Walsh, Conan Weiland, Anthony P. McCoy, Joseph C. Woicik, Rinus T.P. Lee, Pat Lysaght, Greg Hughes​​

 

47: Heavily Tellurium Doped n-Type InGaAs Grown by MOCVD on 300mm Si wafers
Journal of Crystal Growth 426, pp. 243-247, 2015
Tommaso Orzali, Alexey Vert, Rinus T.P. Lee, Aras Norvilas, Gensheng Huang, Joshua L Herman, Richard J.W. Hill, Satyavolu S. Papa Rao

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​46: Ni-(In, Ga) As Alloy Formation Investigated by Hard-X-ray Photoelectron Spectroscopy and X-ray Absorption Spectroscopy
Physical Review Applied 2 (6), p. 064010, 2014
Lee A Walsh, Greg Hughes, Conan Weiland, Joseph C Woicik, Rinus TP Lee, Wei-Yip Loh, Pat Lysaght, Chris Hobbs

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45: Very Low Resistance Alloyed Ni-Based Ohmic Contacts to InP-Capped and Uncapped n+ In0. 53Ga0. 47As
Journal of Applied Physics 116 (16), p. 164506, 2014
M. Abraham, S.Y. Yu, W.H. Choi, R.T.P. Lee, S.E. Mohney

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44: Challenges of Contact Module Integration for GaN-Based Devices in a Si-CMOS Environment
Journal of Vacuum Science & Technology B 32 (3) p.030606, 2014
Derek W. Johnson, Pradhyumna Ravikirthi, Jae Woo Suh, Rinus T.P. Lee, Richard J.W. Hill, Man Hoi Wong, Edwin L. Piner, Harlan Rusty Harris

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43: (Invited) Positive Bias Instability and Recovery in InGaAs Channel nMOSFETs
IEEE Transactions on Device and Materials Reliability 13 (4), pp. 507-514, 2013
S. Deora, G. Bersuker, W-Y Loh, D. Veksler, K. Matthews, T.W. Kim, R.T.P. Lee, R.J.W. Hill, D-H Kim, W-E Wang, C Hobbs, P.D. Kirsch

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42: Threshold Voltage Shift due to Charge Trapping in Dielectric-Gated AlGaN/GaN High Electron Mobility Transistors Examined in Au-Free Technology
IEEE Transactions on Electron Devices 60 (10), pp. 3197-3203, 2013
Derek W. Johnson, Rinus T.P. Lee, Richard J.W. Hill, Man Hoi Wong, Gennadi Bersuker, Edwin L. Piner, Paul D. Kirsch, H. Rusty Harris

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41: Contact Resistance Reduction Technology using Aluminum Implant and Segregation for Strained p-FinFETs with Silicon–Germanium Source/Drain
IEEE Transactions on Electron Devices 57 (6), pp. 1279-1286, 2010
M. Sinha, R.T.P Lee, E.F. Chor, Y.C. Yeo

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40: Schottky Barrier Height Modulation of Nickel–Dysprosium-Alloy Germanosilicide Contacts for Strained P-FinFETs

IEEE Electron Device Letters 30 (12), pp. 1278-1280, 2009

M. Sinha, R.T.P. Lee, E.F. Chor, Y.C. Yeo

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39: The Role of Carbon and Dysprosium in Ni[Dy]Si:C Contacts for SBH Reduction and Application in N-Channel MOSFETs With Si:C S/D Stressors

IEEE Transactions on Electron Devices 56 (11), pp. 2770-2777, 2009

R.T.P. Lee, A.T.Y. Koh, K.M. Tan, T.Y. Liow, D.Z. Chi, Y.C. Yeo

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38: Silicon: Carbon S/D Stressors: Integration of a Novel Nickel Aluminide-Silicide and Post-Solid-Phase-Epitaxy Anneal for reduced Schottky-Barrier and Leakage

ECS Transactions 25 (7), pp. 211-216, 2009

Shao Ming Koh, Wei-Jing Zhou, Rinus T.P. Lee, Mantavya Sinha, Chee-Mang Ng, Zhiyong Zhao, Helen Maynard, Naushad Variam, Yuri Erokhin, Ganesh Samudra, Yee-Chia Yeo

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37: Effect of Substitutional Carbon Concentration on Schottky-Barrier Height of Nickel Silicide formed on Epitaxial Silicon-Carbon Films

Journal of Applied Physics 106 (4), p. 043703, 2009

P.S.Y. Lim, R.T.P. Lee, M. Sinha, D.Z. Chi, Y.C. Yeo

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36: Platinum Germanosilicide as Source/Drain Contacts in P-Channel Fin Field-Effect Transistors (FinFETs)

IEEE Transactions on Electron Devices 56 (7), pp. 1458-1465, 2009

R.T.P. Lee, D.Z. Chi, Y.C. Yeo

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35: Ultra High-Stress Liner comprising Diamond-Like Carbon for Performance Enhancement of p-Channel Multiple-Gate Transistors

IEEE Transactions on Electron Devices 56 (6), pp. 1277-1283, 2009

K.M. Tan, M. Yang, T.Y. Liow, R.T.P. Lee, Y.C. Yeo

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34: Integration of Al Segregated NiSiGe/SiGe Source/Drain Contact Technology in p-FinFETs for Drive Current Enhancement

ECS Transactions 19 (1), pp. 323-330, 2009

M Sinha, RTP Lee, SN Devi, GQ Lo, EF Chor, YC Yeo

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33: Sulfur-Induced PtSi: C/Si: C Schottky Barrier Height lowering for Realizing n-channel FinFETs with Reduced External Resistance

IEEE Electron Device Letters 30 (5), pp. 472-474, 2009

R.T.P. Lee, A.E.J. Lim, K.M. Tan, T.Y. Liow, D.Z. Chi, Y.C. Yeo

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32: Achieving Sub-0.1 eV Hole Schottky Barrier Height for NiSiGe on SiGe by Aluminum Segregation

Journal of The Electrochemical Society 156 (4), pp. H233-H238, 2009

M. Sinha, R.T.P. Lee, A. Lohani, S. Mhaisalkar, E.F. Chor, Y.C. Yeo

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31: Performance Benefits of Diamond-Like Carbon Liner Stressor in Strained p-channel Field-Effect Transistors with Silicon–Germanium Source and Drain

IEEE Electron Device Letters 30 (3), pp. 250-253, 2009

K.M. Tan, M. Yang, W.W. Fang, A.E.J. Lim, R.T.P. Lee, T.Y. Liow, Y.C. Yeo

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30: Novel Aluminum Segregation at NiSi/p+-Si Source/Drain Contact for Drive Current Enhancement in P-Channel FinFETs

IEEE Electron Device Letters 30 (1), pp. 85-87, 2009

M. Sinha, R.T.P. Lee, K.M. Tan, G.Q. Lo, E.F. Chor, Y.C. Yeo

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29: Strained Silicon Nanowire Transistors with Germanium Source and Drain Stressors

IEEE Transactions on Electron Devices 55 (11), pp. 3048-3055, 2008

Tsung-Yang Liow, Kian-Ming Tan, Rinus Tek Po Lee, Ming Zhu, Ben Lian-Huat Tan, N Balasubramanian, Yee-Chia Yeo

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28: Strained n-Channel FinFETs Featuring In Situ Doped Silicon–Carbon (Si1−yCy) Source and Drain Stressors With High Carbon Content

IEEE Transactions on Electron Devices 55 (9), pp. 2475-2483, 2008

Tsung-Yang Liow, K.M. Tan, D. Weeks, R.T.P. Lee, M. Zhu, K.M. Hoe, C.H. Tung, M. Bauer, J. Spear, S.G. Thomas, G.S. Samudra, N Balasubramanian, Yee-Chia Yeo

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27: Novel Rare-Earth Dielectric Interlayers for Wide NMOS Work-Function Tunability in Ni-FUSI Gates

IEEE Transactions on Electron Devices 55 (9), pp. 2370-2377, 2008

A.E.J. Lim, R.T.P. Lee, G.S. Samudra, D.L. Kwong, Y.C. Yeo

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26: Modification of Molybdenum Gate Electrode Work Function via (La-, Al-Induced) Dipole Effect at High-k/SiO2 Interface

IEEE Electron Device Letters 29 (8), pp. 848-851, 2008

Andy Eu-Jin Lim, Rinus Tek Po Lee, Ganesh S Samudra, Dim-Lee Kwong, Yee-Chia Yeo

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25: Diamond-Like Carbon (DLC) liner: A New Stressor for p-channel Multiple-Gate Field-Effect Transistors

IEEE Electron Device Letters 29 (7), pp. 750-752, 2008

Kian-Ming Tan, Wei-Wei Fang, Mingchu Yang, Tsung-Yang Liow, Rinus T.P. Lee, Narayanan Balasubramanian, Yee-Chia Yeo

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24: Germanium Source and Drain stressors for Ultrathin-Body and Nanowire Field-Effect Transistors

IEEE Electron Device Letters 29 (7), pp. 808-810, 2008

Tsung-Yang Liow, Kian-Ming Tan, Rinus T.P. Lee, Ming Zhu, Ben L-H Tan, N Balasubramanian, Yee-Chia Yeo

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23: Pulsed Laser Annealing of Silicon-Carbon Source/Drain in MuGFETs for Enhanced Dopant Activation and High Substitutional Carbon Concentration

IEEE Electron Device Letters 29 (5), pp. 464-467, 2008

Alvin Tian-Yi Koh, Rinus Tek-Po Lee, Fang-Yue Liu, Tsung-Yang Liow, Kian Ming Tan, Xincai Wang, Ganesh S Samudra, N Balasubramanian, Dong-Zhi Chi, Yee-Chia Yeo

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22: P-Channel Tri-Gate FinFETs Featuring Ni1−yPty SiGe Source/Drain Contacts for Enhanced Drive Current Performance

IEEE Electron Device Letters 29 (5), pp. 438-441, 2008

R.T.P. Lee, K.M. Tan, A.E.J. Lim, T.Y. Liow, G.S. Samudra, D.Z. Chi, Y.C. Yeo

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21: Effectiveness of Aluminum Incorporation in Nickel Silicide and Nickel Germanide Metal Gates for Work Function Reduction

Japanese Journal of Applied Physics 47 (4S), p. 2383, 2008

A.E.J. Lim, R.T.P. Lee, A.T.Y. Koh, G.S. Samudra, D.L. Kwong, Y.C. Yeo

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20: Novel Extended-Pi Shaped Silicon–Germanium S/D Stressors for Strain and Performance Enhancement in p-Channel Tri-Gate Fin-Type Field-Effect Transistor

Japanese Journal of Applied Physics 47 (4S), p.2589, 2008

Kian-Ming Tan, Tsung-Yang Liow, Rinus T.P. Lee, Ming Zhu, Keat-Mun Hoe, Chih-Hang Tung, N Balasubramanian, Ganesh S Samudra, Yee-Chia Yeo

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19: Achieving Conduction Band-Edge SBH for Arsenic-Segregated Nickel Aluminide Disilicide and Implementation in FinFETs with Ultra-Narrow Fin Widths

IEEE Electron Device Letters 29 (4), pp. 382-385, 2008

Rinus Tek-Po Lee, Tsung-Yang Liow, Kian-Ming Tan, Andy Eu-Jin Lim, Alvin Tian-Yi Koh, Ming Zhu, Guo-Qiang Lo, Ganesh S. Samudra, Dong Zhi Chi, Yee-Chia Yeo

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18: Nickel-Aluminum Alloy Silicides with High Aluminum Content for Contact Resistance Reduction and Integration in n-channel Field-Effect Transistors

Journal of The Electrochemical Society 155 (3), pp. H151-H155, 2008

Alvin Tian-Yi Koh, Rinus Tek-Po Lee, Andy Eu-Jin Lim, Doreen Mei-Ying Lai, Dong-Zhi Chi, Keat-Mun Hoe, N. Balasubramanian, Ganesh S. Samudra, Yee-Chia Yeo

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17: A High-Stress Liner Comprising Diamond-Like Carbon (DLC) for Strained p-channel MOSFET

IEEE Electron Device Letters 29 (2), 192-194, 2008

Kian-Ming Tan, Ming Zhu, Wei-Wei Fang, Mingchu Yang, Tsung-Yang Liow, Rinus T.P. Lee, Keat Mun Hoe, C.H. Tung, N. Balasubramanian, G.S. Samudra, Yee-Chia Yeo

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16: Spacer Removal Technique for Boosting Strain in n-channel FinFETs with Silicon-Carbon Source and Drain Stressors

IEEE Electron Device Letters 29 (1), pp. 80-82, 2008

Tsung-Yang Liow, Kian-Ming Tan, Rinus TP Lee, Ming Zhu, Keat-Mun Hoe, Ganesh S Samudra, N Balasubramanian, Yee-Chia Yeo

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15: Nickel-Silicide:Carbon Contact Technology for n-channel MOSFETs with Silicon–Carbon Source/Drain

IEEE Electron Device Letters 29 (1), pp. 89-92, 2008

Rinus TP Lee, L.T. Yang, T.Y. Liow, K.M. Tan, Andy E.J. Lim, K.W. Ang, Doreen M.Y.  Lai, K.M. Hoe, G.Q. Lo, G.S. Samudra, Dong Zhi Chi, Yee-Chia Yeo

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14: N-Channel (110)-Sidewall Strained FinFETs with Silicon–Carbon Source and Drain Stressors and Tensile Capping Layer

IEEE Electron Device Letters 28 (11), 1014-1017, 2007

Tsung-Yang Liow, Kian-Ming Tan, Rinus T.P. Lee, Chih-Hang Tung, Ganesh S. Samudra, N. Balasubramanian, Yee-Chia Yeo

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13: Impact of Interfacial Dipole on Effective Work Function of Nickel Fully Silicided Gate Electrodes Formed on Rare-Earth-Based Dielectric Interlayers

Applied Physics Letters 91 (17), p172115, 2007

A.E.J. Lim, W.W. Fang, F. Liu, R.T.P. Lee, G. Samudra, D.L. Kwong, Y.C. Yeo

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12: Strained p-Channel FinFETs With Extended Π Shaped Silicon–Germanium Source and Drain Stressors

IEEE Electron Device Letters 28 (10), 905-908, 2007

Kian-Ming Tan, Tsung-Yang Liow, Rinus TP Lee, Keat Mun Hoe, Chih-Hang Tung, N Balasubramanian, Ganesh S Samudra, Yee-Chia Yeo

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11: Addressing Materials and Integration Issues for NiSi Silicide Contact Metallization in Nano-Scale CMOS Devices

Thin Solid Films 515 (22), 8102-8108, 2007

D.Z. Chi, R.T.P. Lee, A.S.W. Wong

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10: Probing the ErSi1. 7 Phase Formation by Micro-Raman Spectroscopy

Journal of The Electrochemical Society 154 (5), pp. H361-H364, 2007

Rinus Tek-Po Lee, Kian-Ming Tan, Tsung-Yang Liow, Chee-Sheng Ho, S Tripathy, Ganesh S Samudra, Dong-Zhi Chi, Yee-Chia Yeo

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09: N-channel FinFETs with 25-nm Gate Length and Schottky-Barrier Source and Drain featuring Ytterbium Silicide

IEEE Electron Device Letters 28 (2), pp. 164-167, 2007

Rinus TP Lee, Andy Eu-Jin Lim, Kian-Ming Tan, Tsung-Yang Liow, Guo-Qiang Lo, Ganesh S Samudra, Dong Zhi Chi, Yee-Chia Yeo

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08: Yttrium- and Terbium-Based Interlayer on SiO2 and HfO2 Gate Dielectrics for Work Function Modulation of Nickel Fully Silicided Gate in nMOSFET

IEEE Electron Device Letters 28 (6), pp. 482-485, 2007

A.E.J. Lim, R.T.P. Lee, X.P. Wang, W.S. Hwang, C.H. Tung, G.S. Samudra, D.L. Kwong, Y.C. Yeo

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07: Drive-Current Enhancement in FinFETs using Gate-Induced Stress

IEEE Electron Device Letters 27 (9), pp. 769-771, 2006

K.M. Tan, T.Y. Liow, R.T.P. Lee, C.H. Tung, G.S. Samudra, W.J. Yoo, Y.C. Yeo

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06: Enhanced Morphological Stability of NiGe films Formed using Ni(Zr) Alloy

Thin Solid Films 504 (1), pp. 104-107, 2006

S.L. Liew, R.T.P. Lee, K.Y. Lee, B. Balakrisnan, S.Y. Chow, M.Y. Lai, D.Z. Chi

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05: Full Silicidation of Silicon Gate Electrodes Using Nickel-Terbium Alloy for MOSFET Applications

Journal of the Electrochemical Society 153 (4), p.G337, 2006

A.E.J. Lim, R.T.P. Lee, C.H. Tung, S. Tripathy, D.L. Kwong, Y.C. Yeo

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04: Fully Silicided Ni1− x Pt x Si Metal Gate Electrode for p-MOSFETs

Electrochemical and Solid-State Letters 8 (7), pp. G156-G159, 2005

R.T.P. Lee, S.L. Liew, W.D. Wang, E.K.C. Chua, S.Y. Chow, M.Y. Lai, D.Z. Chi

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03: Current–voltage Characteristics of Schottky Barriers with Barrier Heights Larger than the Semiconductor Band Gap: The Case of Ni Ge∕ n-(001) Ge Contact

Journal of Applied Physics 97 (11), p. 113706, 2005

D.Z. Chi, R.T.P. Lee, S.J. Chua, S.J. Lee, S. Ashok, D.L. Kwong

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02: Effects of Ti incorporation in Ni on Silicidation Reaction and Structural/Electrical Properties of NiSi

Journal of The Electrochemical Society 151 (9), pp. G642-G647, 2004

R.T.P. Lee, D.Z. Chi, M.Y. Lai, N.L. Yakovlev, S.J. Chua

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01: Maskless Process for Fabrication of Ultra-Fine Pitch Solder Bumps for Flip Chip Interconnects

J. Electronic Packaging 125 (4), pp. 597-601, 2003

R.T.P. Lee, D.Z. Chi, S.J. Chua